| PART |
Description |
Maker |
| AS8ER128K32_03 AS8ER128K32 AS8ER128K32Q-150_883C A |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array AVAILABLE AS MILITARY
|
AUSTIN[Austin Semiconductor]
|
| AS8ER128K32 |
128K x 32 EEPROM Radiation Tolerant EEPROM Memory Array
|
AUSTIN[Austin Semiconductor]
|
| SST29LE010-150-4C-NHE CAT25C33Y20 GLS29EE512-70-4I |
EEPROM 128K X 8 150ns
EEPROM (4kx8) 32K 2.5-6.0
EEPROM 64K X 8 70ns
EEPROM 128K X 8 70ns
16Kb Add-Only Memory 16K X 1 OTPROM, PDSO6
|
Silicon Storage Technology, Inc.
Advanced Semiconductor, Inc.
Maxim Integrated Products
|
| 28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）的EEPROM
PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位）EEPROM
3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
| HN58X24256FPIE HN58X24256I HN58X24256TIE HN58X2412 |
Memory>EEPROM>Serial EEPROM
Two-wire serial interface 128k EEPROM (16-kword 】 8-bit) 256k EEPROM (32-kword 】 8-bit)
|
Renesas Electronics Corporation
|
| M28010-15WKA6 M28010-15WBA1 M28010-20RBA6 M28010-1 |
128K X 8 EEPROM 3V, 150 ns, PQCC32
128K X 8 EEPROM 3V, 150 ns, PDIP32
128K X 8 EEPROM 3V, 200 ns, PDIP32
128K X 8 EEPROM 3V, 100 ns, PDIP32
|
STMICROELECTRONICS
|
| HN58X25128TIE HN58X25128FPIE |
Serial Peripheral Interface 128k EEPROM (16-kword × 8-bit) 256k EEPROM (32-kword × 8-bit) Electrically Erasable and Programmable Read Only Memory
|
Renesas Electronics Corporation
|
| AS8F512K32_03 AS8S128K32_03 AS8F512K32 AS8F512K32P |
512K x 32 FLASH FLASH MEMORY ARRAY
128K x 32 SRAM SRAM MEMORY ARRAY
|
AUSTIN[Austin Semiconductor]
|
| BR93L66RFVM-WTR CAT28C64BGI-12T CAT25C32Y14I CAT25 |
EEPROM SRL 256X16 BIT
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
EEPROM (4kx8) 32K 2.5-6.0
EEPROM (4kx8) 32K 1.8-6.0
EEPROM (1024x8) 8K
EEPROM 256K X 8 200ns
EEPROM I2C BUS; 4.5 to 5.5V 16Kbit; -40 to 85 C
EEPROM (256x8) 2K 1.8-6.0
EEPROM (512x8) 4k 1.8-6.0
EEPROM 128K X 8 150ns
EEPROM (8kx8) 64K 1.8-6.0
EEPROM (2048x8)(1024x16)16K
EEPROM U 804-29EE0107CWH
EEPROM 64K X 8 70ns
EEPROM (256x8) 2K 2.5-6.0
EEPROM (8kx8) 64K 2.5-6.0
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, SOIC
SPI Serial CMOS EEPROM (Motorola Compatible), 32K, 2-bit Block Protection, WPEN Bit, TSSOP
EEPROM (384x8) 128k 16
EEPROM SPI 1KBIT
EEPROM SPI 4096X8 BIT
EEPROM SRL 64X16 BIT
EEPROM (256x8) (128x16) 2K
8-Kb I<sup>2</sup>C CMOS Serial EEPROM, SOIC
EEPROM (128x8) 1k 2.5-6.0
EEPROM (8kx8) 64K 5V 90ns
EEPROM (32kx8) 256K 5V 150
EEPROM (32kx8) 256K 5V 120
EEPROM 2kb 1.7-5.5V Ind I2C
EEPROM 512K-Bit CMOS PARA EEPROM
EEPROM (32kx8) 256K 3V 250
EEPROM 64K X 8 512K 5V 150
EEPROM 256K (32KX8)
|
Omron Electronics, LLC
Atmel, Corp.
MITSUMI ELECTRIC CO., LTD.
Intersil, Corp.
Cypress Semiconductor, Corp.
TE Connectivity, Ltd.
Silicon Storage Technology, Inc.
BCD Semiconductor Manufacturing, Ltd.
Belden, Inc.
Rohm Co., Ltd.
Bourns, Inc.
NXP Semiconductors N.V.
Lattice Semiconductor, Corp.
Rectron Semiconductor
SIEMENS AG
Maxim Integrated Products, Inc.
Rochester Electronics, LLC
RF Solutions, Ltd.
Fujitsu, Ltd.
|
| AT17LV002A AT17LV010A AT17LV128A AT17LV256A AT17LV |
2M-bit Configuration EEPROM (5V and 3.3V), Altera Pinout.
1M-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
128K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
256K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
512K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
65K-bit FPGA Configuration EEPROM (5V and 3.3V). Altera Pinout.
FPGA configuration EEPROM memory. Memory size 2-Mbit.
FPGA configuration EEPROM memory. Memory size 1-Mbit.
|
Atmel
|
| E28F002BX-B80 E28F002BX-T60 E28F002BX-T80 E28F002B |
5V or Adjustable, Low-Voltage, Step-Up DC-DC Controller 28F200BX - B 2兆位28K的1656K × 8）启动块闪存系列
ACTUATOR, SWITCH, ROUND, LATCH; Approval Bodies:BEAB, VDE, UL, CSA; Diameter, external:29mm; IP rating:65; Operations, mechanical No. of:100000; Temp, op. max:85(degree C); Temp, op. min:-20(degree C) RoHS Compliant: Yes
28F002BX-B - 2-MBIT (128K x 16. 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16, 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16 / 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
2-MBIT (128K x 16/ 256K x 8) BOOT BLOCK FLASH MEMORY FAMILY
|
http://
Intel, Corp.
PROM
Intel Corp.
Intel Corporation
|
